
ASM International NV
We help semiconductor manufacturers to miniaturize the transistors on integrated circuits501-1000 EmployeesActively Hiring
- Public StagePublicly traded company
ASM International NV careers
At ASM, we support a broad portfolio of wafer processing technologies. Each is used for one and often several precise applications during the processing of wafers to create chips. Here is a short introduction describing what each process is used for.
Atomic Layer Deposition (ALD)
Used to create precise deposition of extremely thin high-k dielectric and metal layers for transistor gates.
LPCVD, Diffusion and Oxidation
Used for various steps where relatively high temperature is used to anneal materials or for forming silicon oxides.
Epitaxy
Used for forming silicon-based channel and strain layers for advanced transistors.
Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Used to deposit low-k dielectrics used in interconnect layers.
Plasma-Enhanced Atomic Layer Deposition (PEALD)
Used to deposit highly conformal dielectrics at low temperatures.
Atomic Layer Deposition (ALD)
Used to create precise deposition of extremely thin high-k dielectric and metal layers for transistor gates.
LPCVD, Diffusion and Oxidation
Used for various steps where relatively high temperature is used to anneal materials or for forming silicon oxides.
Epitaxy
Used for forming silicon-based channel and strain layers for advanced transistors.
Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Used to deposit low-k dielectrics used in interconnect layers.
Plasma-Enhanced Atomic Layer Deposition (PEALD)
Used to deposit highly conformal dielectrics at low temperatures.
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